MD simulation of stress-assisted nanometric cutting mechanism of 3C silicon carbide
نویسندگان
چکیده
منابع مشابه
Atomistic aspects of ductile responses of cubic silicon carbide during nanometric cutting
Cubic silicon carbide (SiC) is an extremely hard and brittle material having unique blend of material properties which makes it suitable candidate for microelectromechanical systems and nanoelectromechanical systems applications. Although, SiC can be machined in ductile regime at nanoscale through single-point diamond turning process, the root cause of the ductile response of SiC has not been u...
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ژورنال
عنوان ژورنال: Industrial Lubrication and Tribology
سال: 2019
ISSN: 0036-8792,0036-8792
DOI: 10.1108/ilt-03-2019-0096